| Sub type |
Partnumber |
Value |
Package |
Amount |
Location |
Description |
Manufacturer |
Last update |
|
|
| FET |
BF245 |
|
TO-92 |
2 |
|
N-channel silicon field-effect transistors |
|
2026-09-08 14:19:55 |
|
|
|
| FET |
BS170 |
|
TO-92 |
4 |
|
N-Channel Enhancement Mode Field Effect Transistor |
|
2026-09-08 14:19:55 |
|
|
|
| FET |
BS250 |
|
TO-92 |
1 |
|
Enhancement-Mode MOSFET Transistors |
|
2026-09-08 14:19:55 |
|
|
|
| FET |
BSP250 |
|
|
4 |
|
30V 3A MOSFET |
|
2026-09-08 14:19:55 |
|
|
|
| FET |
BUK453 |
|
TO-220 |
2 |
|
PowerMOS transistor
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor |
|
2026-09-08 14:19:55 |
|
|
|
| FET |
BUK456 |
|
|
12 |
|
N-FET 60V/52A/150W
N-channel enhancement mode field-effect power transistor in a plastic envelope.
Used in: Telavaunu |
Philips |
2026-09-08 14:19:55 |
|
|
|
| FET |
FDV302P |
|
SOT-23 |
1 |
|
P-channel DFET |
|
2026-09-08 14:19:55 |
|
|
|
| FET |
FDV304P |
|
SOT-23 |
6 |
|
P-channel 25V |
|
2026-09-08 14:19:55 |
|
|
|
| FET |
NX7002BKR |
|
SOT-23 |
50 |
Garage, FET bag |
Transistor: N-MOSFET; unipolar; 60V; 0.17A; Idm: 0.9A |
Nexperia |
2026-09-08 14:20:15 |
|
|
|